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HUR3040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR3040 VRSM V 400 VRRM V 400 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 30 tbd tbd tbd -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR3040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.11 1.46 0.9 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 30 5.5 6.8 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR3040 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 40 30 20 10 0 0.0 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 1600 nC 1200 TVJ= 100C VR = 200V IRM 50 A 40 TVJ= 100C VR = 200V TVJ=150C TVJ=100C TVJ= 25C Qr 800 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 400 10 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 3 Peak reverse current IRM versus -diF/dt 15 V VFR 0.6 2.0 TVJ= 100C VR = 200V TVJ= 100C IF = 30A tfr us tfr 0.4 1.5 Kf 1.0 trr 80 IF= 60A IF= 30A IF= 15A 70 10 VFR IRM 5 0.5 60 0.2 Qr 0.0 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0396 0.1 ZthJC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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